Last Update Aug 2022

​2022

• Uniaxially Aligned 1D Sandwich-Molecular Wires: Electronic Structure and Magnetism, J. Phys. Chem. C 126, 3140 (2022).
• Fermi surface tomography,  arxiv2105.15055; Nature Communications 13, 4132 (2022).

• Single-crystal graphene on Ir(110), arxiv2109.04198; Phys. Rev. B 105, 165405 (2022).
  
  

​2021

• Proximity effects in the charge density wave order and superconductivity in single-layer NbSe2, ACS Nano 15, 19430 (2021).

• Bulk band structure of Sb2Te3 determined by angle-resolved photoemission spectroscopy, arxiv2109.01891; Phys. Chem. Chem. Phys. 23, 26401 (2021).

• Ultrafast electronic line width broadening in the C 1s core level of graphene, arxiv2105.10472; Phys. Rev. B 104, L161104 (2021).

• Electronic Properties of Single-Layer CoO2/Au(111),  arxiv2104.02791; 2D Materials 8, 035050 (2021).
• Structural and electronic inhomogeneity of superconducting Nb-doped Bi2Se3 ,Phys. Rev. B 103, 085107 (2021).
• Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors, arxiv2103.16975; Journal of Electron Spectroscopy and Related Phenomena 250, 147093 (2021).
• Tuning the doping of epitaxial graphene on a conventional semiconductor via substrate surface reconstruction, arxiv2010.08404; J. Phys Chem Lett. 12(4):1262-1267 2021.
• Moiré induced electronic structure in monolayer V2S3 on Au(111), arXiv:2007.11962; Phys. Rev. B 103, 115414 (2021).
• Inelastic helium atom scattering from Sb2Te3(111): Phonon dispersion, focusing effects and surfing, Physical Chemistry Chemical Physics 23, 7806 (2021).

​2020

• The occupied electronic structure of ultrathin boron doped diamond, arxiv1907.00673; Nanoscale Advances 2, 1358 (2020).
• First time- and momentum-resolved photoemission studies using time-of-flight momentum microscopy at a free-electron laser,r, arxiv1906.12155, Rev. of Scientific Instruments 91, 013109 (2020).
• Observation and origin of the delta-manifold in Si:P delta-layers, arxiv1911.08274, Phys. Rev. B 101, 121402(R) (2020).
• Decoupling Molybdenum Disulfide from Its Substrate by Cesium Intercalation, arxiv2006.05765, J. Phys. Chem. C 124, 12397 (2020).

2019

• Layer and orbital interference effects in photoemission from transition metal dichalcogenides, Phys. Rev. B  100, 235423 (2019).
• Momentum-resolved linear dichroism in bilayer MoS2, arxiv1910.01848, Phys. Rev. B  100, 241406(R) (2019).
• Basal plane oxygen exchange of epitaxial MoS2 without edge oxidation, 2D Materials 6, 045013 (2019).
• Epitaxial single layer NbS2 on Au(111): synthesis, structure, and electronic properties, arXiv:1901.03552, Phys. Rev. Matt. 3, 044003 (2019).
• Transient Hot Electron Dynamics in Single-Layer TaS2,Philip Hofmann, arxiv1901.07819, Physical Review B 99, 165421 (2019).
• Pseudodoping of Metallic Two-Dimensional Materials by The Supporting Substrates, arxiv1807.00756, Nature Communications 10, 180 (2019).
• Influence of an anomalous temperature-dependence of the phase coherence length on the conductivity of magnetic topological insulators, arxiv:1806.10014, Phys. Rev. Lett. 123, 036406 (2019).
• A universal approach for the synthesis of two-dimensional binary compounds, Nature Communications 10, 2957 (2019).
• Growth and structure of singly oriented single-layer tungsten disulfide on Au(111),  arXiv1806.04928, Phys. Rev. Matt. 3, 014003, (2019).

2018

• Quasi-free-standing single-layer WS2 achieved by intercalation,  arxiv1811.05748, Phys. Rev. Mat. 2, 124001 (2018).
• Electron-phonon coupling in single-layer MoS2, arxiv1811.07297, Surface Science 681, 64 (2018).
• Nanoscale Surface Dynamics of Bi2Te3(111): Observation of a Prominent Surface Acoustic Wave and the Role of van der Waals Interactions, Nanoscale 10, 14627 (2018).
• Novel single-layer vanadium sulphide phases, arxiv1803.07999, 2D Materials 4, 0454009 (2018).
• Epitaxial Growth of Single-Orientation High-Quality MoS2 Monolayers, arxiv1802.02220, 2D Materials 5, 035012 (2018).
• Photoemission Investigation of Oxygen Intercalated Epitaxial Graphene on Ru(0001), arxiv1802.00075, Surface Science 678, 57 (2018).
• Fragility of the Dirac cone splitting in topological crystalline insulator heterostructures, arxiv1712.07894, ACS Nano 12, 617 (2018).
• Electronic Structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3, arXiv:1711.07039, J. Phys. Cond. Mat. 30, 065502 (2018).

2017

• Sputtering an exterior metal coating on copper enclosure for large-scale growth of single-crystalline graphene, 2D Materials 4, 045017 (2017).
• Substrate-induced semiconductor-to-metal transition in monolayer WS2, arXiv:1708.02799, Phys. Rev. B  96, 235440 (2017).
• Spin-dependent electron-phonon coupling in the valence band of single-layer WS2,  arxiv1706.08484, Phys. Rev. B 96, 121402(R) (2017).
• Quasi one-dimensional metallic band dispersion in the commensurate charge density wave of 1T-TaS2, arxiv1705.00455, Phys. Rev. B 96, 195147 (2017).
• Electron-Phonon Coupling and Surface Debye Temperature of Bi2Te3(111) from Helium Atom Scattering, arxiv1704.07416, Phys. Rev. B 95, 195401 (2017).
• Spin and Valley Control of Free Carriers in Single-Layer WS2 arxiv1608.06023, Phys. Rev. B 95, 041405(R) (2017).
• Quasi one-dimensional metallic band dispersion in the commensurate charge density wave of 1T-TaS2, arxiv1705.00455.
• Spin and Valley Control of Free Carriers in Single-Layer WS2, arxiv1608.06023, Phys. Rev. B 95, 041405(R) 2017).

2016

• Symmetry Driven Band Gap Engineering in Hydrogen Functionalized Graphene, ACS Nano 10, 10798 (2016).
• Reconstruction-induced trefoil knot Fermi contour of Au(111), arxiv1610.01736, Phys. Rev. B 94, 201401(R) (2016).
• Manifestation of nonlocal electron-electron interaction in graphene, arxiv1604.00496, Phys. Rev. B 94, 081403(R) (2016).
• Crystalline and electronic structure of single-layer TaS2, arxiv1606.05856, Phys. Rev. B 94, 081404(R) (2016).
• Absence of superconductivity in ultra-thin layers of FeSe synthesized on a topological insulator, arxiv1606.05738, Phys. Rev. B  94, 125437 (2016)
• Ultrafast Band Structure Control of a Two-Dimensional Heterostructure, arxiv1606.03555, ACS Nano 10, 6315 (2016).
• Nickel: The time-reversal symmetry conserving partner of iron on a chalcogenide topological insulator, arxiv1603.09689, Phys. Rev. B 94, 161114 (2016).
• Band gap engineering by Bi intercalation of graphene on Ir(111), arxiv1603.08724, Phys. Rev. B 93, 165437 (2016).
• Topological insulator homojunctions including magnetic layers: the example of n-p type (n-QLs Bi2Se3/Mn-Bi2Se3) heterostructures, arxiv1602.03450,  Applied Physics Lett. 108, 262402 (2016).
• Single-layer MoS2 on Au(111): band gap renormalization and substrate interaction, arxiv1601.00095, Phys. Rev. B  93, 165422 (2016).

2015

•  Van der Waals Epitaxy of Two-Dimensional MoS2-Graphene Heterostructures in Ultra-High Vacuum, ACS Nano 9, 6502-6510 (2015).
• Synthesis of Epitaxial Single-Layer MoS2 on Au(111), arxiv1509.05133, Langmuir 35, 9700-9706 (2015).
• Growth and electronic structure of epitaxial single-layer WS2 on Au(111), arxiv1509.05133, Phys. Rev. B 92, 245442, 1-7 (2015).
• One-dimensional spin texture of Bi(441): Quantum spin Hall properties without a topological insulator, Phys. Rev. B 91, 165307 (2015).
• Facile Electrochemical Transfer of Large-Area Single Crystal Epitaxial Graphene from Ir(111), J. Phys. D: Appl. Phys 48, 115306 (2015).

• Strongly anisotropic spin-orbit splitting in a two-dimensional electron gas, arxiv1411.7308, Phys. Rev. B 91, 035445 (2015).
• Controlling the growth of epitaxial graphene on metalized diamond (111) surface. App. Phys. Lett. vol. 107,  doi: 10.1063/1.4935073

• Electronic Structure of Epitaxial Single-Layer MoS2, arxiv1410.0615, Phys. Rev. Lett. 114, 046802 (2015).

2014

• Bottom-up approach for the low-cost synthesis of graphene-alumina nanosheet interfaces using bimetallic alloys, Nat. Comm. 5, 5062 (2014).

• Sequential Oxygen and Alkali Intercalation of Epitaxial Graphene on Ir(111): Enhanced Many-Body Effects and Formation of pn-interfaces, arxiv1404.6132
  2D Materials 1, 025002 (2014).

• Bulk Band Structure of Bi2Te3, arxiv1403.3050, Phys. Rev. B 90, 075105 (2014).
• Surface Dominated Transport on a Bulk Topological Insulator, arxiv1310.0202, Nano Lett. 14, 3755 (2014).

2013

• Electronic Structure of Graphene on a Reconstructed Pt(100) Surface: Hydrogen Adsorption, Doping and Band Gaps, Phys. Rev. B 88 125425 (2013).
• Kinks in the σ band of graphene induced by electron-phonon coupling, Phys. Rev. Lett. 111,216806 (2013).
• Three Dirac points on the (110) surface of the topological insulator Bi x Sb (1-x), New Journal of Physics 15, 103011 (2013).
• Surface structure of Bi2Se3 determined by low-energy electron diffraction and surface x-ray diffraction, Phys. Rev. B 88, 041404, (2013).

• Evidence for a direct band gap in the topological insulator Bi2Se3 from theory and experiment, Phys. Rev. B 87, 121111 (2013).
• Controllable magnetic doping of the surface state of a topological insulator, Phys. Rev. Lett. 110, 126804 (2013) .

• Phase Separation and Bulk p-n Transition in Single Crystals of Bi2Te3Se Topological Insulator,  J. Advanced Materials 25, nr. 6, s. 889-893 (2013).
• Electron-phonon coupling in the two-dimensional electron gas on Bi2Se3, J. Physica Status Solidi 7, 136 (2013).
• Electron-phonon coupling in quasi free-standing graphene, J. Phys. Condens. Matter 25, 094001 (2013).

2012

• Oxygen Switching of the Epitaxial Graphene-Metal Interaction, ACS Nano 6 (11), pp 9551–9558 (2012).
• Phase Separation and Bulk p-n Transition in Single Crystals of Bi2Te3Se Topological Insulator, Advance Materials 25, 889-893 (2013).
• Surface states on a topologically non-trivial semimetal: The case of Sb(110) , Phys. Rev. B 85, 155431 (2012).
• High-temperature behaviour of supported graphene: electron-phonon coupling and substrate-induced doping, Phys. Rev. B  86, 161402(R) (2012).
• Transfer-Free Electrical Insulation of Epitaxial Graphene from its Metal Substrate, Nano Lett. 12, issue 9, pp. 4503-4507 (2012).
• Robust Surface Doping of Bi2Se3 by Rb Intercalation, ACS Nano 6(8), p 7009-7015 (2012).
• Unconventional spin texture of a topologically nontrivial semimetal Sb(110), New Journal of Physics 14, 103026 (2012).
• The electronic structure of clean and adsorbate-covered Bi2Se3: an angle-resolved photoemission study, Semicond. Sci. Technol.  27, 124001(2012).
• Electron-phonon coupling in the two-dimensional electron gas on Bi2Se3, Phys. Status Solidi RRL, 1–3 (2012).

2011

• Strongly enhanced electron-phonon coupling in the Rashba-split state of the Bi/Ag(111) surface alloy , Phys. Rev. B 83, 155451 (2011).
• Stability of the topological state on Bi2Se3, Phys. Rev. B 83, 241303(R) (2011).
• Large tuneable Rashba spin splitting of a two-dimensional electron gas in Bi2Se3 , Phys. Rev. Lett. 107, 096802 (2011).
• Simultaneous quantization of bulk conduction and valence states through adsorption of nonmagnetic impurities on Bi2Se3 , Phys. Rev. Lett. 107, 086802 (2011).

2010

• Electron-phonon coupling in potassium-doped graphene: Angle-resolved photoemission spectroscopy, Phys. Rev. B 81, 041403(R) (2010).
• Band Gap Opening by Patterned Hydrogen Adsorption, Nature Materials, Volume: 9 , 315–319 (2010).
• Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3 , Nat. Comm. 1, 8, 128 (2010).


2009

•  Surface core level shifts of clean and oxygen covered Ir(111), New Journal of Physics 11 063002 (2009).

• Tuning the doping of epitaxial graphene on a conventional semiconductor via substrate surface reconstruction, arxiv2010.08404; J. Phys Chem Lett. 12(4):1262-1267 2021.

Single-crystal graphene on Ir(110), arxiv2109.04198; Phys. Rev. B 105, 165405 (2022).